SOLUTION FOR ETCHING COPPER ON WAFER

SOLUTION FOR ETCHING COPPER ON WAFER

PROBLEM TO BE SOLVED: To provide an etching solution for etching copper on a wafer at a high etching rate while controlling the corrosion of other metals to an extremely low level. SOLUTION: The etching solution for etching copper on a wafer, for instance, a copper layer with a thickness of 10 μm or...

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Bibliographische Detailangaben
Hauptverfasser: NOZAKI TAKASHI, ISHINO YOSHIHIRO, SANO AKIYOSHI, ARAI TORU, FUJITA KOJI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide an etching solution for etching copper on a wafer at a high etching rate while controlling the corrosion of other metals to an extremely low level. SOLUTION: The etching solution for etching copper on a wafer, for instance, a copper layer with a thickness of 10 μm or thinner at an adequate etching rate while inhibiting the corrosion of other metals, is an alkaline solution containing a copper (II) ammine complex having sulfate ions or a chlorine ions as counter ions. COPYRIGHT: (C)2005,JPO&NCIPI