SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of ensuring the reliability of the connection between a semiconductor element and a resin substrate even when heat is repeatedly applied to the device over a long period of time owing to the operation of the semiconductor element and to...

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1. Verfasser: MATSUZONO SEIGO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator MATSUZONO SEIGO
description PROBLEM TO BE SOLVED: To provide a semiconductor device capable of ensuring the reliability of the connection between a semiconductor element and a resin substrate even when heat is repeatedly applied to the device over a long period of time owing to the operation of the semiconductor element and to a change in use environment temperature. SOLUTION: The semiconductor device comprises a resin substrate 1 having a mounting part for mounting a semiconductor element 4 at an upper surface central part, the semiconductor element 4 flip-chip connected to and mounted on the mounting part via a solder bump 8, a resin loading agent 9 loaded between the semiconductor element 4 and the resin substrate 1, a metal frame 2 joined to the upper surface outer peripheral part of the resin substrate 1 so as to surround the semiconductor element 4, and a metal cover 3 joined to the upper surface of the metal frame 2 so as to surround the semiconductor element 4. The glass transition point of the resin loading material 9 falls within a range of from 50 to 90°C. COPYRIGHT: (C)2005,JPO&NCIPI
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2005101327A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2005101327A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2005101327A3</originalsourceid><addsrcrecordid>eNrjZDAMdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8AwJVvB19At1c3QOCQ3y9HNX8HUN8fB34WFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgYGpoYGhsZG5o7GRCkCAKciJv0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD</title><source>esp@cenet</source><creator>MATSUZONO SEIGO</creator><creatorcontrib>MATSUZONO SEIGO</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of ensuring the reliability of the connection between a semiconductor element and a resin substrate even when heat is repeatedly applied to the device over a long period of time owing to the operation of the semiconductor element and to a change in use environment temperature. SOLUTION: The semiconductor device comprises a resin substrate 1 having a mounting part for mounting a semiconductor element 4 at an upper surface central part, the semiconductor element 4 flip-chip connected to and mounted on the mounting part via a solder bump 8, a resin loading agent 9 loaded between the semiconductor element 4 and the resin substrate 1, a metal frame 2 joined to the upper surface outer peripheral part of the resin substrate 1 so as to surround the semiconductor element 4, and a metal cover 3 joined to the upper surface of the metal frame 2 so as to surround the semiconductor element 4. The glass transition point of the resin loading material 9 falls within a range of from 50 to 90°C. COPYRIGHT: (C)2005,JPO&amp;NCIPI</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2005</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20050414&amp;DB=EPODOC&amp;CC=JP&amp;NR=2005101327A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25566,76549</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20050414&amp;DB=EPODOC&amp;CC=JP&amp;NR=2005101327A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MATSUZONO SEIGO</creatorcontrib><title>SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD</title><description>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of ensuring the reliability of the connection between a semiconductor element and a resin substrate even when heat is repeatedly applied to the device over a long period of time owing to the operation of the semiconductor element and to a change in use environment temperature. SOLUTION: The semiconductor device comprises a resin substrate 1 having a mounting part for mounting a semiconductor element 4 at an upper surface central part, the semiconductor element 4 flip-chip connected to and mounted on the mounting part via a solder bump 8, a resin loading agent 9 loaded between the semiconductor element 4 and the resin substrate 1, a metal frame 2 joined to the upper surface outer peripheral part of the resin substrate 1 so as to surround the semiconductor element 4, and a metal cover 3 joined to the upper surface of the metal frame 2 so as to surround the semiconductor element 4. The glass transition point of the resin loading material 9 falls within a range of from 50 to 90°C. COPYRIGHT: (C)2005,JPO&amp;NCIPI</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2005</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAMdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8AwJVvB19At1c3QOCQ3y9HNX8HUN8fB34WFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgYGpoYGhsZG5o7GRCkCAKciJv0</recordid><startdate>20050414</startdate><enddate>20050414</enddate><creator>MATSUZONO SEIGO</creator><scope>EVB</scope></search><sort><creationdate>20050414</creationdate><title>SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD</title><author>MATSUZONO SEIGO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2005101327A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2005</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MATSUZONO SEIGO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MATSUZONO SEIGO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD</title><date>2005-04-14</date><risdate>2005</risdate><abstract>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of ensuring the reliability of the connection between a semiconductor element and a resin substrate even when heat is repeatedly applied to the device over a long period of time owing to the operation of the semiconductor element and to a change in use environment temperature. SOLUTION: The semiconductor device comprises a resin substrate 1 having a mounting part for mounting a semiconductor element 4 at an upper surface central part, the semiconductor element 4 flip-chip connected to and mounted on the mounting part via a solder bump 8, a resin loading agent 9 loaded between the semiconductor element 4 and the resin substrate 1, a metal frame 2 joined to the upper surface outer peripheral part of the resin substrate 1 so as to surround the semiconductor element 4, and a metal cover 3 joined to the upper surface of the metal frame 2 so as to surround the semiconductor element 4. The glass transition point of the resin loading material 9 falls within a range of from 50 to 90°C. COPYRIGHT: (C)2005,JPO&amp;NCIPI</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-18T02%3A29%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MATSUZONO%20SEIGO&rft.date=2005-04-14&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2005101327A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true