PLASMA ETCHING APPARATUS

PLASMA ETCHING APPARATUS

PROBLEM TO BE SOLVED: To provide a plasma etching apparatus having a chamber into which gas flows uniformly. SOLUTION: The plasma etching apparatus has the chamber 10, which is equipped with an upper plasma electrode 32 in its upper portion and a lower plasma electrode 31 in its lower portion, respe...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHOI HEE-HWAN, KIN SHOKO, KYO SEITETSU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PLASMA TECHNIQUE
PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS
PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a plasma etching apparatus having a chamber into which gas flows uniformly. SOLUTION: The plasma etching apparatus has the chamber 10, which is equipped with an upper plasma electrode 32 in its upper portion and a lower plasma electrode 31 in its lower portion, respectively. A plurality of diffuser sheets 70 are disposed between the upper plasma electrode and a gas feed pipe 60 which is connected to the chamber. An electric power generator 40 for applying plasma voltage to the upper and lower plasma electrodes is disposed, a plurality of gas injection nozzles 32a are formed on the upper plasma electrode, and a plurality of auxiliary injection nozzles 70a are formed on the diffuser sheets. COPYRIGHT: (C)2005,JPO&NCIPI