RESONANT CAVITY LIGHT EMITTING DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device, in particular a resonant cavity light emitting device. SOLUTION: The light emitting device includes a resonant cavity formed by a reflective metal layer and a distributed Bragg reflector. Light is extracted from the resonant cav...

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Bibliographische Detailangaben
1. Verfasser: LUDOWISE MICHAEL J
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device, in particular a resonant cavity light emitting device. SOLUTION: The light emitting device includes a resonant cavity formed by a reflective metal layer and a distributed Bragg reflector. Light is extracted from the resonant cavity through the distributed Bragg reflector. A light emitting region sandwiched between a layer of a first conductive type layer and a second conductive type layer is disposed in the resonant cavity. In some embodiments, a first and a second contacts are formed at the same side of the resonant cavity, forming a flip chip device or an epitaxy up device. COPYRIGHT: (C)2005,JPO&NCIPI