CAPACITIVE ELEMENT AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a capacitive element which can be prevented from deterioration of electric characteristics by improving interfacial characteristics between a noble metal material which constitutes top and bottom electrodes and a capacitive insulation film. SOLUTION: The capacitive e...

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Bibliographische Detailangaben
Hauptverfasser: SOSHIRO YUUJI, KUTOUCHI TOMOE
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a capacitive element which can be prevented from deterioration of electric characteristics by improving interfacial characteristics between a noble metal material which constitutes top and bottom electrodes and a capacitive insulation film. SOLUTION: The capacitive element comprises the bottom electrode 6 formed to supply voltage to a transistor formed in a semiconductor substrate 11, the top electrode 10 formed on the opposite side of the semiconductor substrate 11 from the bottom electrode 6, the capacitive insulation film 9 formed between the top electrode 10 and the bottom electrode 6, and an interface reinforcing layer 7a formed to improve the interfacial characteristics of the capacitive insulation film 9. COPYRIGHT: (C)2005,JPO&NCIPI