DEVICE AND METHOD FOR FORMING OXIDE FILM OF SEMICONDUCTOR SUBSTRATE

PROBLEM TO BE SOLVED: To provide an oxide film forming device of a semiconductor substrate which easily forms a high-quality oxide film on a substrate surface with high throughput, and also to provide an oxide film forming method. SOLUTION: The oxide film forming device forms an oxide film on the surface of the semiconductor substrate. The oxide film forming device at least comprises: a chamber in which the semiconductor substrate is thrown; a retention means for retaining the semiconductor substrate in the chamber; an inert gas supply means for supplying an inert gas into the chamber; an O-ion supply means for supplying an O-ion into the chamber; and a natural oxide film removal means for supplying a substance for removing a natural oxide film formed on the semiconductor substrate into the chamber. The oxide film forming device includes the oxide film forming method for forming the oxide film on the surface of the semiconductor substrate by using the oxide film forming device. COPYRIGHT: (C)2005,JPO&NCIPI