INDIUM ZINC OXIDE SINGLE CRYSTAL AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide an indium zinc oxide single crystal expressed by general formula: (ZnO)m-In2O3(m=4-11), which is transparent and has high electroconductivity; and to provide a method for manufacturing the same. SOLUTION: The indium zinc oxide single crystal expressed by general form...

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Bibliographische Detailangaben
Hauptverfasser: OLEG MAROCHIKIN, KAWAMOTO KUNIHITO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide an indium zinc oxide single crystal expressed by general formula: (ZnO)m-In2O3(m=4-11), which is transparent and has high electroconductivity; and to provide a method for manufacturing the same. SOLUTION: The indium zinc oxide single crystal expressed by general formula: (ZnO)m-In2O3(m=4-11) and having an electroconductivity of ≥5×103Scm-1at 1.200 K in the direction orthogonal to c-axis and a visible light transmittance in the c-axis direction of ≥70% is obtained by melting a mixed powder, obtained by adding a lead fluoride (PbF2) powder to a polycrystalline (ZnO)m-In2O3(m=4-11) powder in an amount of 3-8 times of the weight of the polycrystalline powder, at 1,050-1,250°C in the atmosphere, then after slowly cooling to at least 900°C at a temperature lowering speed of 0.5-5°C/h, cooling to room temperature, and removing coexisting lead fluoride with a hot nitric acid solution or the like. COPYRIGHT: (C)2005,JPO&NCIPI