METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element that can etch a conductor film on a semiconductor substrate by using a spin etching process. SOLUTION: The method of the present invention includes the steps of: forming a predetermined insulating film on a semiconductor substrate 210; forming a contact hole into the insulating film; forming a predetermined conductor film on the insulating film while burying the contact hole; rotating the semiconductor substrate 210 on which the conductor film is formed; and etching the conductor film by supplying etching liquid on the rotating semiconductor substrate 210 such that the conductor film exists only within the contact hole and does not exist on the insulating film, wherein the etching liquid is supplied through a nozzle 214 which is located on the upper portion of the semiconductor substrate 210 and performs boom swing at one side of the right and left sides based on the center of the semiconductor substrate 210. COPYRIGHT: (C)2005,JPO&NCIPI