METHOD FOR FORMING SILICONE OXIDE FILM WITH SPIN-ON GLASS

PROBLEM TO BE SOLVED: To provide a method for forming a silicone oxide film by hardening a film with spin-on glass by using an oxidizer solution. SOLUTION: The silicone oxide film is formed by the following method. The spin-on glass film including polysilazane is hardened by using the oxidizer solut...

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Bibliographische Detailangaben
Hauptverfasser:	GU SHUZEN, KO ONKI, KIM KOKON, RA KEITAI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for forming a silicone oxide film by hardening a film with spin-on glass by using an oxidizer solution. SOLUTION: The silicone oxide film is formed by the following method. The spin-on glass film including polysilazane is hardened by using the oxidizer solution and converted to the silicone oxide film by applying heat treatment one or more times in a process for manufacturing a semiconductor device. COPYRIGHT: (C)2005,JPO&NCIPI