PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide a pattern forming method for forming a specified pattern by using a reversal mask process, and to provide a method for manufacturing a semiconductor device by using the pattern forming method. SOLUTION: A resist film 5 is formed on a film 3 to be processed, the resis...
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| creator | ONISHI KIYONOBU KAWAMURA DAISUKE KATO HIROKAZU |
| description | PROBLEM TO BE SOLVED: To provide a pattern forming method for forming a specified pattern by using a reversal mask process, and to provide a method for manufacturing a semiconductor device by using the pattern forming method. SOLUTION: A resist film 5 is formed on a film 3 to be processed, the resist film 5 is patterned, a mask layer 6 to cover the resist film 5 is applied by a spin coating method on the film 3, and the surface of the mask layer 6 is made to recede to expose the upper face of the resist film 5. After the upper face of the resist film 5 is exposed, the resist film 5 is removed and the film 3 is etched by using the mask layer 6 as a mask. In a region where the pattern of the resist film 5 is formed, the side length y (μm) of the maximum square region having ≥90 % covering rate of the resist film 5 and the side length x (μm) of the maximum square region having ≤10% covering rate of the resist film 5 satisfy the relation of the formula (1). COPYRIGHT: (C)2005,JPO&NCIPI |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2005043420A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2005043420A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2005043420A3</originalsourceid><addsrcrecordid>eNrjZPAIcAwJcQ3yU3DzD_L19HNX8HUN8fB3UXD0c4ExgTIKvo5-oW6OziGhQSA1wa6-ns7-fi6hziFAORfXME9nVx4G1rTEnOJUXijNzaDk5hri7KGbWpAfn1pckJicmpdaEu8VYGRgYGpgYmxiZOBoTJQiAG4FLVo</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>ONISHI KIYONOBU ; KAWAMURA DAISUKE ; KATO HIROKAZU</creator><creatorcontrib>ONISHI KIYONOBU ; KAWAMURA DAISUKE ; KATO HIROKAZU</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a pattern forming method for forming a specified pattern by using a reversal mask process, and to provide a method for manufacturing a semiconductor device by using the pattern forming method. SOLUTION: A resist film 5 is formed on a film 3 to be processed, the resist film 5 is patterned, a mask layer 6 to cover the resist film 5 is applied by a spin coating method on the film 3, and the surface of the mask layer 6 is made to recede to expose the upper face of the resist film 5. After the upper face of the resist film 5 is exposed, the resist film 5 is removed and the film 3 is etched by using the mask layer 6 as a mask. In a region where the pattern of the resist film 5 is formed, the side length y (μm) of the maximum square region having ≥90 % covering rate of the resist film 5 and the side length x (μm) of the maximum square region having ≤10% covering rate of the resist film 5 satisfy the relation of the formula (1). COPYRIGHT: (C)2005,JPO&NCIPI</description><edition>7</edition><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2005</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050217&DB=EPODOC&CC=JP&NR=2005043420A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050217&DB=EPODOC&CC=JP&NR=2005043420A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ONISHI KIYONOBU</creatorcontrib><creatorcontrib>KAWAMURA DAISUKE</creatorcontrib><creatorcontrib>KATO HIROKAZU</creatorcontrib><title>PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE</title><description>PROBLEM TO BE SOLVED: To provide a pattern forming method for forming a specified pattern by using a reversal mask process, and to provide a method for manufacturing a semiconductor device by using the pattern forming method. SOLUTION: A resist film 5 is formed on a film 3 to be processed, the resist film 5 is patterned, a mask layer 6 to cover the resist film 5 is applied by a spin coating method on the film 3, and the surface of the mask layer 6 is made to recede to expose the upper face of the resist film 5. After the upper face of the resist film 5 is exposed, the resist film 5 is removed and the film 3 is etched by using the mask layer 6 as a mask. In a region where the pattern of the resist film 5 is formed, the side length y (μm) of the maximum square region having ≥90 % covering rate of the resist film 5 and the side length x (μm) of the maximum square region having ≤10% covering rate of the resist film 5 satisfy the relation of the formula (1). COPYRIGHT: (C)2005,JPO&NCIPI</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2005</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPAIcAwJcQ3yU3DzD_L19HNX8HUN8fB3UXD0c4ExgTIKvo5-oW6OziGhQSA1wa6-ns7-fi6hziFAORfXME9nVx4G1rTEnOJUXijNzaDk5hri7KGbWpAfn1pckJicmpdaEu8VYGRgYGpgYmxiZOBoTJQiAG4FLVo</recordid><startdate>20050217</startdate><enddate>20050217</enddate><creator>ONISHI KIYONOBU</creator><creator>KAWAMURA DAISUKE</creator><creator>KATO HIROKAZU</creator><scope>EVB</scope></search><sort><creationdate>20050217</creationdate><title>PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE</title><author>ONISHI KIYONOBU ; KAWAMURA DAISUKE ; KATO HIROKAZU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2005043420A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2005</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ONISHI KIYONOBU</creatorcontrib><creatorcontrib>KAWAMURA DAISUKE</creatorcontrib><creatorcontrib>KATO HIROKAZU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ONISHI KIYONOBU</au><au>KAWAMURA DAISUKE</au><au>KATO HIROKAZU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE</title><date>2005-02-17</date><risdate>2005</risdate><abstract>PROBLEM TO BE SOLVED: To provide a pattern forming method for forming a specified pattern by using a reversal mask process, and to provide a method for manufacturing a semiconductor device by using the pattern forming method. SOLUTION: A resist film 5 is formed on a film 3 to be processed, the resist film 5 is patterned, a mask layer 6 to cover the resist film 5 is applied by a spin coating method on the film 3, and the surface of the mask layer 6 is made to recede to expose the upper face of the resist film 5. After the upper face of the resist film 5 is exposed, the resist film 5 is removed and the film 3 is etched by using the mask layer 6 as a mask. In a region where the pattern of the resist film 5 is formed, the side length y (μm) of the maximum square region having ≥90 % covering rate of the resist film 5 and the side length x (μm) of the maximum square region having ≤10% covering rate of the resist film 5 satisfy the relation of the formula (1). COPYRIGHT: (C)2005,JPO&NCIPI</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
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