PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a pattern forming method for forming a specified pattern by using a reversal mask process, and to provide a method for manufacturing a semiconductor device by using the pattern forming method. SOLUTION: A resist film 5 is formed on a film 3 to be processed, the resist film 5 is patterned, a mask layer 6 to cover the resist film 5 is applied by a spin coating method on the film 3, and the surface of the mask layer 6 is made to recede to expose the upper face of the resist film 5. After the upper face of the resist film 5 is exposed, the resist film 5 is removed and the film 3 is etched by using the mask layer 6 as a mask. In a region where the pattern of the resist film 5 is formed, the side length y (μm) of the maximum square region having ≥90 % covering rate of the resist film 5 and the side length x (μm) of the maximum square region having ≤10% covering rate of the resist film 5 satisfy the relation of the formula (1). COPYRIGHT: (C)2005,JPO&NCIPI