SUBSTRATE WITH THROUGH ELECTRODE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE

PROBLEM TO BE SOLVED: To provide a substrate with through electrodes in which the depth of blind via holes and polishing quantity on a rear surface side can be kept constant, and forming an insulating layer on the rear surface side is not required to previously prevent the breakdown voltage (withstand voltage) drop, and to provide a manufacturing method thereof and an electronic device. SOLUTION: An SOI wafer (2) having an embedded insulating layer (20) between a supporting substrate layer (10) and a silicon layer (30) is used for the substrate (1) with through electrodes. An inner wall insulating layer (13) is applied to each of via blind holes (12) formed on the layer (10) up to the depth of the layer (20) by using a protective layer (11) as a mask, thereby forming conductive layers (14). Also, contact holes (21) for enabling conduction with the conductive layers (14) are formed on portions, corresponding to the conductive layers (14), of the layers (20) which are exposed by removing the silicon layer (30). COPYRIGHT: (C)2005,JPO&NCIPI