THICKNESS MEASURING METHOD OF THIN-FILM-LIKE MATTER IN SURFACE POLISHING, SURFACE POLISHING METHOD, AND SURFACE POLISHING EQUIPMENT

PROBLEM TO BE SOLVED: To polish a wafer preciously by detecting the thickness of the wafer in a polish operation. SOLUTION: The thickness measuring method is to measure the thickness of the wafer 7 which is being surface-polished. Probe light irradiates the back of the wafer 7 in polishing, its refl...

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Bibliographische Detailangaben
Hauptverfasser:	ISEI YOSHIHITO, HIRAI NORIYOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS PERFORMING OPERATIONS PHYSICS POLISHING SEMICONDUCTOR DEVICES TESTING TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To polish a wafer preciously by detecting the thickness of the wafer in a polish operation. SOLUTION: The thickness measuring method is to measure the thickness of the wafer 7 which is being surface-polished. Probe light irradiates the back of the wafer 7 in polishing, its reflected spectrum is measured by a dispersing multi-channel spectroscope which uses a photodiode array having especially the high sensitivity to light of a wavelength 1 to 2.4 μm, and the thickness is calculated on the basis of its waveform. The surface polishing is carried out while measuring the thickness of the wafer 7 by the above thickness measuring method, and the polishing ends when it reaches a target thickness. COPYRIGHT: (C)2005,JPO&NCIPI