SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a narrow-pitch wire bonding technique that can be applied to an LSI having a laminated wiring structure formed of Cu wiring and a low-k material similarly to an LSI having the conventional aluminum wiring by reducing the damages given to bonding pads. SOLUTION: In a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: NAKAJIMA YASUYUKI, MATSUZAWA ASAO, TANAKA TADAYOSHI, IWASAKI TOMIO, MIURA HIDEO
Format: Patent
Sprache:eng
Schlagworte:
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