SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a narrow-pitch wire bonding technique that can be applied to an LSI having a laminated wiring structure formed of Cu wiring and a low-k material similarly to an LSI having the conventional aluminum wiring by reducing the damages given to bonding pads. SOLUTION: In a semiconductor element in which multilayered laminated wiring is formed of Cu wiring and the low-k insulating film material, all cap wires to the uppermost cap wire are formed of Cu wiring layers. Each bonding pad formed of a Cu layer is constituted in a bonding pad structure in which a high-melting point intermediate metallic layer composed of a Ti (titanium) film or tungsten film, etc., is formed on the Cu layer, and an aluminum alloy layer is formed on the metallic layer. COPYRIGHT: (C)2005,JPO&NCIPI