SEMICONDUCTOR MANUFACTURING APPARATUS

PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus which can perform non-periodic cleaning. SOLUTION: This dry etching apparatus includes a chamber for performing dry etching while generating plasma, an exhaust outlet for exhausting a reactive gas in the chamber, a lower electr...

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Hauptverfasser:	CHOI HEE-HWAN, SONG IN-HO, KIN SHOKO, KYO SEITETSU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CLEANING CLEANING IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus which can perform non-periodic cleaning. SOLUTION: This dry etching apparatus includes a chamber for performing dry etching while generating plasma, an exhaust outlet for exhausting a reactive gas in the chamber, a lower electrode on which a substrate is placed, an upper electrode which is separated from and faces to the lower electrode, and a cleaning section. The cleaning section includes a cleaning electrode which is electrically connected with a power supply section, and generates the plasma including a cleaning gas when the chamber is cleaned, an electrode guide for guiding the cleaning electrode so as to move in the horizontal direction, and an electrode supporter for guiding the cleaning electrode so as to move in the vertical direction while supporting the cleaning electrode. While generating the plasma by applying a power supply to the cleaning electrode, a contaminated material remaining on the inner wall of the chamber is removed. COPYRIGHT: (C)2005,JPO&NCIPI