METHOD FOR PRODUCING HIGH-PURITY ALKYLGALLIUM

PROBLEM TO BE SOLVED: To provide a method for producing a high-purity alkylgallium not containing hydrocarbon impurities derived from a solvent used in production. SOLUTION: In the method for producing the alkylgallium represented by formula (3) GaR23(R2is a 1 or 2C alkyl group) (3) comprises reacti...

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Hauptverfasser: TSUDERA TAKANOBU, NISHIWAKI HIROZANE, TANAKA HIDEJI, HONMA TAKAYUKI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method for producing a high-purity alkylgallium not containing hydrocarbon impurities derived from a solvent used in production. SOLUTION: In the method for producing the alkylgallium represented by formula (3) GaR23(R2is a 1 or 2C alkyl group) (3) comprises reacting a compound represented by formula (1) R13-mGaXm-3(1) (R1is a monofunctional hydrocarbon group; X is a halogen atom; m is an integer of 0-3) with a compound represented by formula (2) R23Al (2), a compound represented by formula (4) R3nAr (4) (R3is H, CH3, an aromatic hydrocarbon group or an electrophilic substituent group; Ar is a 6-16C substituted or nonsubstituted aromatic hydrocarbon group; n is an integer of 1-14) having a boiling point ≥10°C higher than that of the organometallic compound represented by formula (3) is used as a solvent. The high-purity alkylgallium not containing hydrocarbon impurities derived from a solvent is produced in a high yield by using an alkylaluminum as a raw material. COPYRIGHT: (C)2005,JPO&NCIPI