PVD PROCESSOR, AND METHOD FOR DEPOSITING HARD FILM USING THE SAME

PROBLEM TO BE SOLVED: To provide a PVD processor and a method for depositing a hard film using the same in which ion sputter-cleaning is rapidly performed by sufficient energy while adequately maintaining the temperature of a work without being affected by the shape of the work, and a hard film of h...

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1. Verfasser:	YAMAGUCHI TAKUO
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR RELEVANT APPARATUS TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a PVD processor and a method for depositing a hard film using the same in which ion sputter-cleaning is rapidly performed by sufficient energy while adequately maintaining the temperature of a work without being affected by the shape of the work, and a hard film of high quality is deposited later. SOLUTION: The PVD processor to deposit a hard film after ion sputter-cleaning of a work is performed in a chamber 1 in the vacuum atmosphere comprises a hollow rotary shaft 2 to hold the work W, a medium distribution means to distribute cooling medium in the rotary shaft 2, a temperature measurement means to measure the temperature of the cooling medium, and a temperature control means to control the temperature of the cooling medium based on the measured temperature by the temperature measurement means, performs ion-sputter cleaning by sufficient energy while adequately maintaining the temperature of the work W, and realizes the high quality of the hard film to be deposited. COPYRIGHT: (C)2005,JPO&NCIPI