DEVICE FOR GROWING VAPOR PHASE OF NITRIDE

PROBLEM TO BE SOLVED: To speedily and uniformly grow a vapor phase of a nitride having a film thickness of hundreds μm without decreasing an operating efficiency. SOLUTION: The device for growing a vapor phase of a nitride has a means for generating gallium chloride for providing, a source boat 5 fo...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SUNAKAWA HARUO, MITA KAZUTO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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