DEVICE FOR GROWING VAPOR PHASE OF NITRIDE

PROBLEM TO BE SOLVED: To speedily and uniformly grow a vapor phase of a nitride having a film thickness of hundreds μm without decreasing an operating efficiency. SOLUTION: The device for growing a vapor phase of a nitride has a means for generating gallium chloride for providing, a source boat 5 for housing gallium, a rective gas introductory pipe 6 for introducing the reaction gas to the boat 5, and a metal-source refilling pipe 7 for refilling gallium to the boat 5, to a hydride introductory pipe 3 for introducing an ammonia to a rection pipe 2 and a generating pipe 4 arranged in an upstream side in the reaction pipe 2, and a board holder 19 arranged in a downstream side in the reaction pipe 2. The source boat 5 is composed with a semiclose-structured reaction chamber 8 connected to the pipe 6, a filling chamber 9 connected to the pipe 7, and a communicating chamber 10 for communicating the chamber 8 and the chamber 9 at the position beneath a minimum liquid level of the gallium usage. COPYRIGHT: (C)2005,JPO&NCIPI