PROCESS FOR FABRICATING COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT
PROBLEM TO BE SOLVED: To obtain a process for fabricating a chip in which wire bonding is required only once, alignment is facilitated in packaging, and man-hour is reduced. SOLUTION: In the process for fabricating a compound semiconductor light emitting element by forming an n-type semiconductor th...
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Zusammenfassung: | PROBLEM TO BE SOLVED: To obtain a process for fabricating a chip in which wire bonding is required only once, alignment is facilitated in packaging, and man-hour is reduced. SOLUTION: In the process for fabricating a compound semiconductor light emitting element by forming an n-type semiconductor thin film layer 13, an active layer and a p-type semiconductor thin film layer 17, in layers, on one side of a substrate 11 and providing one electrode 32 on the upper surface of the p-type semiconductor thin film layer 17 and the other electrode 33a on the other side of the substrate 11, a vertical hole 20 reaching the n-type semiconductor thin film layer 13 being connected with the electrode 33a is made from the other side of the substrate 11 by irradiating a short wave laser beam having a wavelength of 500 nm or less, the electrode 33a provided on the other side of the substrate 11 is connected electrically with the n-type semiconductor thin film layer 13 through a conductive material 30 filling the vertical hole 20, the electrode 32 is connected with a first lead electrode 101 on a base mount 100 and the electrode 33a is connected with a second lead electrode 103 by a bonding wire 104. COPYRIGHT: (C)2005,JPO&NCIPI |
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