MEMORY CELL CIRCUIT AND DATA WRITING AND DATA READING METHOD TO BE USED FOR THE SAME

PROBLEM TO BE SOLVED: To complete the sensing of the necessary data only by using simple control circuits. SOLUTION: The memory cell circuit includes a first memory cell 32 which is used for storing the nonvolatile first data and outputs a first current to be made correspondent to the first data, a...

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Hauptverfasser: KO SHIGO, HSU YU-MING
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To complete the sensing of the necessary data only by using simple control circuits. SOLUTION: The memory cell circuit includes a first memory cell 32 which is used for storing the nonvolatile first data and outputs a first current to be made correspondent to the first data, a second memory cell 34 which is used for storing the nonvolatile second data and is inputted with a second current to be made correspondent to the second data, a bias circuit 36 which is electrically connected to the first memory cell 32 and the second memory cell 34, is inputted with the first current from the first memory cell 32 and is used to output the second current to the second memory cell 34, and an amplifier circuit 38 which is electrically connected to a load contact of the bias circuit 36 and is used to output an output signal made correspondent to the first data. COPYRIGHT: (C)2005,JPO&NCIPI