SIZE MEASURING MARK, SEMICONDUCTOR DEVICE, AND METHOD FOR INSPECTING THE SAME

PROBLEM TO BE SOLVED: To provide a size measuring mark which can detect a fault at the initial stage of a process by combining the step difference of a lower layer and the pattern roughness, and to provide a method for manufacturing a semiconductor device and a semiconductor device. SOLUTION: In a p-type semiconductor substrate 101; a relatively large step difference S1 of an element isolation region insulating film 102 and an element region 103, and a relatively small step difference (well step difference), S2 are formed. On the region including these step differences S1, S2, a first pattern difference P11 having a predetermined width over at least high and low levels is provided. A second pattern P12 provided near the first pattern P11 is arranged to have roughness at least between those each other or in a positional relation to the first pattern P11. For example, a space distance d11 in Fig. relates to rough disposition, and d12 relates to dense disposition. COPYRIGHT: (C)2005,JPO&NCIPI