METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having an ion implantation process which can suppress the occurrence of a polymer residue resulting from an ion implantation, and to provide the semiconductor device manufactured by this method. SOLUTION: A resist fil...

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Bibliographische Detailangaben
Hauptverfasser:	MAEDA SEIJI, SAKAI KATSUNAO, KATAYAMA KATSUO
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having an ion implantation process which can suppress the occurrence of a polymer residue resulting from an ion implantation, and to provide the semiconductor device manufactured by this method. SOLUTION: A resist film for the ion implantation is formed in a two-layer structure. The width of a first resist film 2A of lower layer is formed smaller than that of a second resist film 3A of upper layer. Thus, the formation of the change-of-properties layer in the side wall of the first resist film 2A is prevented. COPYRIGHT: (C)2005,JPO&NCIPI