MANUFACTURING METHOD OF ELECTRON EMITTING ELEMENT

PROBLEM TO BE SOLVED: To provide a manufacturing method of an electron emitting element which can emit electrons with high reliability stably at a low voltage. SOLUTION: The electron emitting element comprises an insulator layer formed on an electron supplying layer, and a metal thin film electrode formed on the insulator layer, and it is characterised in that the electron supplying layer is provided with a diode function layer making a current flow from an ohmic layer to the metal thin film electrode, and the diode function layer is arranged at the interface of the ohmic electrode and the electron supplying layer, or in the middle of the the electron supplying layer, or at the interface of the insulator layer and the electron supplying layer, and the electron emitting element emits electron when an electric field in impressed between the electron supplying layer and the metal thin film electrode. The manufacturing method of the electron emitting element comprises an electron supply layer formation process forming the electron supply layer on the ohmic electrode, and the electron supply layer formation process includes a diode function layer formation process successively forming at least two layers of silicon layers of which, at least one layer contains impurity. COPYRIGHT: (C)2005,JPO&NCIPI