SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To solve a problem that the dicing street of a semiconductor wafer was cut conventionally by a dicing blade to divide the same into individual semiconductor element, however, it requires machining cut whereby chipping upon cutting was generated so many times and chip crack was generated by electrical stress for a long period of time, thereby deteriorating the reliability of the element and solve another problem that a rear surface electrode was formed on the rear surface of the wafer only whereby the resistance of a substrate component could not be reduced. SOLUTION: The element is divided by providing grooves, whose depth is corresponding to the finishing thickness of the wafer, and applying rear surface grinding or the like on the rear surface of the wafer. The element is substantially separated before the rear surface grinding whereby consideration with respect to the affection of mechanical stress is not necessary, and the element, slightly thicker than an epitaxial layer at the minimum limit, can be formed thereby contributing to miniaturization and thinning. Further, the side wall of the groove can be utilized for a part of the rear surface electrode whereby the resistant component of the substrate can be reduced. COPYRIGHT: (C)2005,JPO&NCIPI