ETCHING APPARATUS
PROBLEM TO BE SOLVED: To provide an etching apparatus which performs high-quality etching treatment by removing a bad condition where a temperature during treatment cannot be controlled. SOLUTION: Etching gas is introduced and pressure is adjusted by a valve 110, an exhaust system 111, and etching t...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | PROBLEM TO BE SOLVED: To provide an etching apparatus which performs high-quality etching treatment by removing a bad condition where a temperature during treatment cannot be controlled. SOLUTION: Etching gas is introduced and pressure is adjusted by a valve 110, an exhaust system 111, and etching treatment of a wafer is carried out by discharging between upper electrodes 105. After the treatment, the apparatus comes into a waiting state. Then, a shielding plate 108 connected with a rotation and vertical moving mechanism 106 is moved onto a lower electrode 104 via a supporting bar 107. Thereafter, the shielding plate is lowered so as to cover the lower electrode 104. Both of them wait at a non-contacting distance. The shielding plate 108 has a fence facing down at an outer peripheral part to have a structure of covering all of the peripheral part of the lower eectrode 104. In addition, the shielding plate 108 incorporates a Peltier element 201. COPYRIGHT: (C)2005,JPO&NCIPI |
---|