ETCHING APPARATUS

PROBLEM TO BE SOLVED: To provide an etching apparatus which performs high-quality etching treatment by removing a bad condition where a temperature during treatment cannot be controlled. SOLUTION: Etching gas is introduced and pressure is adjusted by a valve 110, an exhaust system 111, and etching t...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: OGURA TAKEISA
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide an etching apparatus which performs high-quality etching treatment by removing a bad condition where a temperature during treatment cannot be controlled. SOLUTION: Etching gas is introduced and pressure is adjusted by a valve 110, an exhaust system 111, and etching treatment of a wafer is carried out by discharging between upper electrodes 105. After the treatment, the apparatus comes into a waiting state. Then, a shielding plate 108 connected with a rotation and vertical moving mechanism 106 is moved onto a lower electrode 104 via a supporting bar 107. Thereafter, the shielding plate is lowered so as to cover the lower electrode 104. Both of them wait at a non-contacting distance. The shielding plate 108 has a fence facing down at an outer peripheral part to have a structure of covering all of the peripheral part of the lower eectrode 104. In addition, the shielding plate 108 incorporates a Peltier element 201. COPYRIGHT: (C)2005,JPO&NCIPI