SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method by which the generation of hump can be suppressed in the electrical characteristic of a transistor and which can design a highly accurate MOS transistor circuit. SOLUTION: A groove 14 is formed to share an active area 31 in a substrate 10, an embedded insulation film 20 is formed to fill the groove 14 therewith, a gate insulation film 21 is formed on the active area 31 of the substrate 10, and a gate electrode 22 is formed over the embedded insulation film 10 on the gate insulation film 21. Furthermore, a source-drain area 30 is formed in the active area 31 on both sides of the gate electrode 22. In this case, the embedded insulation film 20 is projected over the surface of the substrate 10 and extended over the edge 15 of the groove 14 to the active area 31. COPYRIGHT: (C)2005,JPO&NCIPI