MANUFACTURING METHOD OF BIPOLAR TRANSISTOR

PROBLEM TO BE SOLVED: To manufacture a bipolar transistor without performing an epitaxial growth process while avoiding a harmful effect caused by a multiple ion implantation method. SOLUTION: A collector layer 102 is formed by ion-implanting (150) second conductivity first impurities to a semiconductor single crystal substrate 100 along a normal line direction on a principal surface of the semiconductor single crystal substrate 100. Further, a buried collector layer 103 is formed by ion-implanting (151) second conductivity second impurities to the semiconductor single crystal substrate 100 in a direction having an inclined angle to the normal line direction of the principal surface of the semiconductor single crystal substrate 100, with an implantation energy higher than that in the ion implantation process of the first impurities. Then, a first conductivity base layer 104 and a second conductivity emitter layer 105 are formed in a specified region in a surface part of the collector layer 102. COPYRIGHT: (C)2005,JPO&NCIPI