COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE

PROBLEM TO BE SOLVED: To manufacture a chip in which wire bonding is required only once and labor can be reduced by facilitating alignment in packaging, and to obtain the elements with a high yield by decreasing the number of steps and reducing cracking of a substrate. SOLUTION: The compound semiconductor light emitting device comprises a substrate 11, an n-type semiconductor thin film layer 13 formed on one surface of the substrate 11, active layers 14, 15 and 16 formed on the n-type semiconductor thin film layer 13, a p-type semiconductor thin film layer 17 formed on the active layer, one electrode 32 provided on the p-type semiconductor thin film layer 17, the other electrode 33a provided on the other surface of the substrate 11, a vertical hole 20 formed by laser machining to penetrate the substrate 11 and to reach the n-type semiconductor thin film layer 13 being connected with the other electrode 33a, a conductive material 30 formed in the vertical hole 20 to connect the n-type semiconductor thin film layer 13 and the other electrode 33a electrically, a base 100 constituting a first lead electrode 101, and a second lead electrode 103. The one electrode 32 is connected with the first lead electrode 101 of the base 100, the other electrode 33a is connected with the second lead electrode 103 by a bonding wire 104 and the substrate 11 side constitutes a main light take-out surface. COPYRIGHT: (C)2005,JPO&NCIPI