FERROELECTRIC CAPACITOR, SEMICONDUCTOR DEVICE, AND PROCESS FOR FABRICATING FERROELECTRIC CAPACITOR

PROBLEM TO BE SOLVED: To provide a ferroelectric capacitor in which deterioration of ferroelectric is suppressed, and to provide its fabricating process. SOLUTION: The ferroelectric capacitor 100 comprises a substrate 10, a lower electrode 20 being arranged on the substrate 10, an insulating film 30 being arranged at least on the substrate 10, a barrier film 40 being arranged on the insulating film 30, a ferroelectric film 60 being arranged at least on the lower electrode 20, and an upper electrode 70 formed at least on the ferroelectric film 60 wherein the ferroelectric film 60 is formed in a hole 50 penetrating at least the insulating film 30 and the barrier film 40 downward to the lower electrode 20. COPYRIGHT: (C)2005,JPO&NCIPI