APPARATUS AND METHOD FOR PROCESSING SUBSTRATE, AND GAS NOZZLE

PROBLEM TO BE SOLVED: To provide an apparatus for processing a substrate which can efficiently purge in not only a process space but also a treated gas supply nozzle when a multinary compound film is formed by laminating a molecular layer on a substrate to be processed. SOLUTION: A vent line is conn...

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Bibliographische Detailangaben
Hauptverfasser:	SUZUKI MIKIO, JINRIKI HIROSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an apparatus for processing a substrate which can efficiently purge in not only a process space but also a treated gas supply nozzle when a multinary compound film is formed by laminating a molecular layer on a substrate to be processed. SOLUTION: A vent line is connected to a one end of the treated gas supply nozzle which discharges a treated gas along the surface of the substrate to be processed into the process space in the shape of a laminar flow, and the treated gas or purged gas is supplied from the other end. COPYRIGHT: (C)2005,JPO&NCIPI