METHOD FOR DEPOSITING FILM AND SUBSTRATE PROCESSING APPARATUS

PROBLEM TO BE SOLVED: To improve the utilization efficiency of treated gas in a substrate processing apparatus. SOLUTION: This method for depositing a film is a method for depositing a film on the substrate to be processed, and includes an adsorption step of adsorbing the treated gas to the surface...

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Bibliographische Detailangaben
Hauptverfasser:	SUZUKI MIKIO, JINRIKI HIROSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To improve the utilization efficiency of treated gas in a substrate processing apparatus. SOLUTION: This method for depositing a film is a method for depositing a film on the substrate to be processed, and includes an adsorption step of adsorbing the treated gas to the surface of the substrate to be processed. In the adsorption step, the treated gas is supplied to flow along the surface of the substrate to be processed. The flowing speed of the treated gas along the substrate to be processed is 50 m/sec or higher and about sound velocity or lower. COPYRIGHT: (C)2005,JPO&NCIPI