SEMICONDUCTOR MEMORY DEVICE
PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which defect detection can be performed in a short period oftime and the circuit area is small. SOLUTION: A bit line equalizer circuit 30a equalizes respectively bit lines BL to a bit line potential VBLA and bit lines /BL to a bit lin...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | TOMIUE KENJI HORIBATAKE SHUICHI |
| description | PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which defect detection can be performed in a short period oftime and the circuit area is small. SOLUTION: A bit line equalizer circuit 30a equalizes respectively bit lines BL to a bit line potential VBLA and bit lines /BL to a bit line potential VBLB in accordance with activation of a bit line equalizing signal BLEQ. A read error in which a short circuit of WL-BC(BL) and a short circuit of WL-SC(SN) are reflected can be detected more quickly without increasing the circuit area by setting the bit lines potential VBLA for the bit lines BL higher than the bit lines potential VBLB for the bit lines /BL. COPYRIGHT: (C)2005,JPO&NCIPI |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2004288299A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2004288299A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2004288299A3</originalsourceid><addsrcrecordid>eNrjZJAOdvX1dPb3cwl1DvEPUvB19fUPilRwcQ3zdHblYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBgYmRhYWRpaWjsZEKQIApUYhNg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR MEMORY DEVICE</title><source>esp@cenet</source><creator>TOMIUE KENJI ; HORIBATAKE SHUICHI</creator><creatorcontrib>TOMIUE KENJI ; HORIBATAKE SHUICHI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which defect detection can be performed in a short period oftime and the circuit area is small. SOLUTION: A bit line equalizer circuit 30a equalizes respectively bit lines BL to a bit line potential VBLA and bit lines /BL to a bit line potential VBLB in accordance with activation of a bit line equalizing signal BLEQ. A read error in which a short circuit of WL-BC(BL) and a short circuit of WL-SC(SN) are reflected can be detected more quickly without increasing the circuit area by setting the bit lines potential VBLA for the bit lines BL higher than the bit lines potential VBLB for the bit lines /BL. COPYRIGHT: (C)2005,JPO&NCIPI</description><edition>7</edition><language>eng</language><subject>CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; INFORMATION STORAGE ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; STATIC STORES ; TESTING</subject><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20041014&DB=EPODOC&CC=JP&NR=2004288299A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20041014&DB=EPODOC&CC=JP&NR=2004288299A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TOMIUE KENJI</creatorcontrib><creatorcontrib>HORIBATAKE SHUICHI</creatorcontrib><title>SEMICONDUCTOR MEMORY DEVICE</title><description>PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which defect detection can be performed in a short period oftime and the circuit area is small. SOLUTION: A bit line equalizer circuit 30a equalizes respectively bit lines BL to a bit line potential VBLA and bit lines /BL to a bit line potential VBLB in accordance with activation of a bit line equalizing signal BLEQ. A read error in which a short circuit of WL-BC(BL) and a short circuit of WL-SC(SN) are reflected can be detected more quickly without increasing the circuit area by setting the bit lines potential VBLA for the bit lines BL higher than the bit lines potential VBLB for the bit lines /BL. COPYRIGHT: (C)2005,JPO&NCIPI</description><subject>CALCULATING</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>INFORMATION STORAGE</subject><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAOdvX1dPb3cwl1DvEPUvB19fUPilRwcQ3zdHblYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBgYmRhYWRpaWjsZEKQIApUYhNg</recordid><startdate>20041014</startdate><enddate>20041014</enddate><creator>TOMIUE KENJI</creator><creator>HORIBATAKE SHUICHI</creator><scope>EVB</scope></search><sort><creationdate>20041014</creationdate><title>SEMICONDUCTOR MEMORY DEVICE</title><author>TOMIUE KENJI ; HORIBATAKE SHUICHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2004288299A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2004</creationdate><topic>CALCULATING</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>INFORMATION STORAGE</topic><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>TOMIUE KENJI</creatorcontrib><creatorcontrib>HORIBATAKE SHUICHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TOMIUE KENJI</au><au>HORIBATAKE SHUICHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR MEMORY DEVICE</title><date>2004-10-14</date><risdate>2004</risdate><abstract>PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which defect detection can be performed in a short period oftime and the circuit area is small. SOLUTION: A bit line equalizer circuit 30a equalizes respectively bit lines BL to a bit line potential VBLA and bit lines /BL to a bit line potential VBLB in accordance with activation of a bit line equalizing signal BLEQ. A read error in which a short circuit of WL-BC(BL) and a short circuit of WL-SC(SN) are reflected can be detected more quickly without increasing the circuit area by setting the bit lines potential VBLA for the bit lines BL higher than the bit lines potential VBLB for the bit lines /BL. COPYRIGHT: (C)2005,JPO&NCIPI</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JP2004288299A |
| source | esp@cenet |
| subjects | CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING INFORMATION STORAGE MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS STATIC STORES TESTING |
| title | SEMICONDUCTOR MEMORY DEVICE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T09%3A19%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TOMIUE%20KENJI&rft.date=2004-10-14&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2004288299A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |