SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING IT

PROBLEM TO BE SOLVED: To provide a semiconductor device having high carrier mobility and capable of suppressing a gate injection current, and to provide a method for manufacturing it. SOLUTION: A thin oxide film is formed on a substrate 1 as an insulating film 2, and a high dielectric film 3 having a dielectric constant higher than that of the oxide film 2 is formed on it. A gate electrode 4 comprising at least one layer of conductive film is formed on the film 3. A source region 8 and a drain region 9 are formed on both side of a channel region 10 of an upper layer of the substrate 1. A birds beak 7a is formed at a gate edge so that the film thickness of the oxide film 2 at the gate edge is thicker than that of the oxide film 2 on the channel region 10. COPYRIGHT: (C)2005,JPO&NCIPI