SEMICONDUCTOR WAFER AND METHOD OF CHAMFERING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor wafer which can be protected against chipping or damage even when it is reduced to 200 μm or below in thickness by grinding its rear surface, and to provide a method of chamfering the same. SOLUTION: A rotary grinding stone 100 provided with a groove arcuate in cross section on its outer peripheral surface is rotated as the semiconductor wafer 102 is rotated. The peripheral edge of the semiconductor wafer 102 is brought into contact with the groove of the rotary grinding stone, so as to deviate the center line of the semiconductor wafer 102 in the direction of thickness from the center line of the groove of the rotary grinding stone in the direction of thickness by a prescribed distance D to chamfer the peripheral edge of the semiconductor wafer 102. The prescribed distance D (mm) is so set as to make an angle larger than 60°. The angle is formed by a tangential line on the end face of the semiconductor wafer 102 at a position distant from either of the surfaces of the semiconductor wafer 102 by a prescribed distance T (0.2 mm or below), with a line in parallel with either of the surfaces of the semiconductor wafer 102 in the cross sectional shape of the semiconductor wafer 102 in the direction of thickness. COPYRIGHT: (C)2005,JPO&NCIPI