SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device which reduces a capacitance related to a gate electrode and source/drain regions provided with stacked diffusion layers, and to provide its manufacturing method. SOLUTION: A cavity 113 is provided between the stacked diffusion layers 110a as a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ADACHI KOICHIRO, NAKANO MASAYUKI, OKUMINE TETSUYA
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a semiconductor device which reduces a capacitance related to a gate electrode and source/drain regions provided with stacked diffusion layers, and to provide its manufacturing method. SOLUTION: A cavity 113 is provided between the stacked diffusion layers 110a as a part of the source/drain regions 110 and the gate electrode 111, respectively. COPYRIGHT: (C)2004,JPO&NCIPI