SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a technology for improving the characteristics of a bipolar transistor. SOLUTION: After a silicon nitride film 7 exposed from the bottom of an aperture OA 1 of a polycrystal silicon film 9 is overetched and the polycrystal silicon film 9 is protruded from the end of the silicon nitride film 7, semiconductor regions (i-SiGeC 23 and CapSiC 27) respectively including carbon are formed to the lower and upper sides of a base region at the time of forming semiconductor regions which become a collector region, the base region, and an emitter region within the aperture OA 1. Moreover, the CapSiC 27 over the base region is formed after the polycrystal SiGe30 growing in the lower side from the rear surface of the protruded part of the polycrystal silicon film 9 is placed in contact (joined) with a p-SiGe 25. As a result, characteristics of element can be improved because diffusion of impurity in the base region is controlled with the semiconductor region including carbon, and the semiconductor region including carbon having higher resistance is not formed at the lower side of the polycrystal SiGe 30. COPYRIGHT: (C)2004,JPO&NCIPI