LIGHT RECEIVING ELEMENT AND LIGHT RECEIVING DEVICE

PROBLEM TO BE SOLVED: To solve a problem that carriers generated from other than a P type heavily doped layer contribute, as a photocurrent, to diffusion and thus deteriorate the response. SOLUTION: On the periphery of a first P type heavily doped layer 2 constituting the light receiving surface of a semiconductor substrate, a second P type heavily doped layer 6 is formed separately from the first P type heavily doped layer 2. On the insulation coating 7 formed on the surface of the semiconductor substrate 1, a first electrode 82 connected with the first P type heavily doped layer 2 through a through hole and a second electrode 83 connected with the second P type heavily doped layer 6 are provided so that an independent bias voltage can be applied between the second P type heavily doped layer 6 and an N type heavily doped layer 11. When an independent bias voltage is applied between the second P type heavily doped layer 6 and the N type heavily doped layer 11, undesired carriers generated from other than the light receiving area can be taken out separately from the signal and the effect of undesired carriers can be suppressed. COPYRIGHT: (C)2004,JPO&NCIPI