FIELD EFFECT TRANSISTOR AND IMAGE DISPLAY DEVICE

PROBLEM TO BE SOLVED: To provide a field effect transistor which is useable as a new semiconductor switching element for providing a basic technique of a flexible display and which facilitates a manufacturing process at a low cost. SOLUTION: The field effect transistor has the structure that a gate...

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Bibliographische Detailangaben
Hauptverfasser: INOUE ATSUHISA, AKAMATSU KEIICHI, MORI SHIGEYASU
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a field effect transistor which is useable as a new semiconductor switching element for providing a basic technique of a flexible display and which facilitates a manufacturing process at a low cost. SOLUTION: The field effect transistor has the structure that a gate electrode and a semiconductor layer disposed adjacent to each other are sandwiched between a source electrode and a drain electrode. COPYRIGHT: (C)2004,JPO&NCIPI