PLASMA ETCHING USING XENON

PROBLEM TO BE SOLVED: To provide an anisotropic etching processing method where etching rate is high, etching selection ratio of substrate vs. resist is high and micro-filling property is reduced. SOLUTION: A substrate having grain boundary on which the resist is coated is placed in an etching area inside a chamber, and a process gas containing a first etchant, a second etchant and xenon is introduced into the etching area. Plasma is generated in the etching area to convert the process gas into an etchant gas to realize the anisotropic etching process where etching rate is high, etching selection ratio of substrate vs. resist is high and micro-filling property is reduced. Preferably, the first etchant contains Cl2and the second etchant contains BCl3. COPYRIGHT: (C)2004,JPO&NCIPI