SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To provide a semiconductor device in which W plugs are disposed on a metal silicide layer and a poly Si layer, formation of a void at a base of a through hole on the poly Si layer and rise of resistance in the W plugs are prevented, and which is formed with a high yield, and to...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	HINOMURA TORU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a semiconductor device in which W plugs are disposed on a metal silicide layer and a poly Si layer, formation of a void at a base of a through hole on the poly Si layer and rise of resistance in the W plugs are prevented, and which is formed with a high yield, and to provide a manufacturing method of the device. SOLUTION: A first through hole is formed in first and second insulating films and a second through hole in the second insulating film. Deposition of a Ti film and nitriding of a surface of the Ti film are repeated, and the Ti films having desired Ti film thickness are formed in the first and second through holes. A TiN film and a W film are deposited and the W film, the TiN film and the Ti film are removed by a CMP method. A first W plug is formed on the metal silicide layer and a second W plug on the poly Si layer. COPYRIGHT: (C)2004,JPO&NCIPI