ELECTROSTATIC DISCHARGE PROTECTIVE CIRCUIT OF TRIPLE WELL SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide an electrostatic discharge protective circuit in which triple well semiconductor device is used alone or in series construction. SOLUTION: The semiconductor device is preferably a diode junction construction. When the semiconductor device is used in a series construction, bias application can be controlled by using a control circuit. Regions 3 and 3A are n-doped, elongate up to a n-doped region 8 downwards, and forms a ring so as to separate a p-doped region 6 from a substrate region 10.The regions 3 and 3A can provide insulators of other size to separate the region 6. Moreover, the region 3 and 3A can be formed by using single implantation, or, by using a plurality of implantation of different energy or a quantity of dose. The region 6 is p-doped so as to make a separation from the substrate 10 possible. In this embodiment, a metallic junction of a p-n diode is formed on an area where the p-region 6 is adjacent to the region 3, the region 3A, and the region 8. COPYRIGHT: (C)2004,JPO&NCIPI