IMAGING ELEMENT AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide an imaging device of a new structure, which can be manufactured through a process of ≤0.13 μm and its manufacturing method. SOLUTION: On a substrate where an optical element is formed, a lower insulating film having a lower contact which is electrically connected to a semiconductor element to drive the optical element is formed covering the optical element. An inter-layer insulating film structure which includes at least a copper contact or copper wire line connected to the lower contact and a copper diffusion preventive film for preventing copper diffusion of the copper contact or copper wiring and having an optical element opening part for collecting light from the surface of its top part of the optical element through the copper diffusion preventive film above the optical element is formed inside on the lower insulating film. A transparent insulating film is formed so that the optical element opening part is buried. A color filter and microlenses 310 are formed on the transparent insulating film. A contact can be formed by using copper, so a highly integrated CMOS image sensor can be provided. COPYRIGHT: (C)2004,JPO&NCIPI