METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device using a COF (chip-on film) method capable of preventing the generation of any void in the periphery of an electrode pad in sealing with resin due to the narrowly pitching of a clearance between the electrode/electrode pad of a semiconductor chip. SOLUTION: When an Au bump 4 of a semiconductor chip 1 is connected to predetermined conductor wiring 6 of a film substrate 5, a semiconductor chip 1 is connected in a status 20 where a film base material 5 is bent so that a clearance between the semiconductor chip 1 and the film base material 5 can be made large. In this status, resin 7 is injected from the semiconductor chip 1 side face by a nozzle 8, and the film base material 6 is pressurized by a tool 22 so that the resin 7 can be exposed from the semiconductor chip 1 side face. Thus, any void generated in the neighborhood of the Au bump 4 can be pushed out and eliminated at the time of injecting the resin. Then, the resin 7 is hardened. Thus, it is possible to prevent any void (clearance) in the periphery of the electrode in sealing with resin, and to realize the highly reliable semiconductor device. COPYRIGHT: (C)2004,JPO&NCIPI