APPARATUS FOR TREATING SUBSTRATE

PROBLEM TO BE SOLVED: To provide an apparatus for treating a substrate, which accomplishes the treatment of high quality with the smallest amount of an agent solution consumption by making a homogeneous liquid current contact with the surface to be coated without using a complicated mechanism, when...

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Bibliographische Detailangaben
1. Verfasser: TOMARI YOSHIAKI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide an apparatus for treating a substrate, which accomplishes the treatment of high quality with the smallest amount of an agent solution consumption by making a homogeneous liquid current contact with the surface to be coated without using a complicated mechanism, when depositing a metal by contacting the agent solution with the surface of a semiconductor wafer or the like, or etching the metal on the contrary, and to provide a method therefor. SOLUTION: The apparatus for treating the surface of the substrate 113 supplies a plating solution 106 of the agent solution through a cell 103 consisting of an inner cylinder onto the treatment side of the substrate 113 (a silicon wafer with a Cu seed layer) held on a wafer holder 115 of a substrate-holding means, in a vessel, wherein a porous flow regulating plate 109 is installed in the cell 103 on an opposing side against the substrate 113. The porous flow regulating plate preferably has a curved shape such as a dome shape. COPYRIGHT: (C)2004,JPO&NCIPI