SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device which can prevent a formed film from containing nitrogen while keeping the function of a low-dielectric-constant film and suppress the content of nitrogen to such a degree that it does not affect the bridging reaction of resist. SOLUTION: This manufacturing method has a process of producing a film depositing gas by setting the flow rate of H2O to either a silicon-containing organic compound having siloxane bond or a silicon-containing organic compound having CH3groups to four or over, and adjusting the pressure to 1.5 Torr or over, a process of forming a low-dielectric-constant insulating film on a heated board for film deposition by applying power to the film depositing gas thereby changing it into a plasma and reacting it, and a process of changing the treating gas containing at least any one among He, Ar, H2, and heavy hydrogen into plasma and bringing the low-dielectric-constant film into contact with the plasma of a treating gas. COPYRIGHT: (C)2004,JPO&NCIPI