SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To obtain a semiconductor device in which an inrush current is prevented surely with a good response at the time of transient response and a required current is fed during steady operation while suppressing increase in the chip size. SOLUTION: The semiconductor device comprises...

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Bibliographische Detailangaben
Hauptverfasser: FUJIMURA HIDEYA, KOBAYASHI MASAKI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To obtain a semiconductor device in which an inrush current is prevented surely with a good response at the time of transient response and a required current is fed during steady operation while suppressing increase in the chip size. SOLUTION: The semiconductor device comprises a high voltage power supply wiring section 7a connected with a high voltage power supply terminal 2a and having a coil-like wiring 17a formed by combining the upper layer wiring and the lower layer wiring of a high voltage power supply wiring, and a high voltage power supply wiring section 7b connected with a high voltage power supply terminal 2b and having a coil-like wiring 17b formed by combining the upper layer wiring and the lower layer wiring of the high voltage power supply wiring wherein the coil-like wiring 17b is formed in the same winding direction as the coil-like wiring 17a such that the central axis of coil is substantially parallel with that of the coil-like wiring 17a and a current flows in reverse direction. When an inrush current is inputted at the time of transient response, mutual inductance is generated by both coil-like wirings 17a and 17b in addition to self inductances thereof thus enhancing action of inductance greatly. COPYRIGHT: (C)2004,JPO&NCIPI