SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To prevent an electrode on a semiconductor substrate from being damaged in a manufacturing process, related to a semiconductor device, along with its manufacturing method where a plurality of metal films are laminated on the semiconductor substrate in which the electrode and an insulating film where an opening part is formed at a position facing the electrode are formed. SOLUTION: The semiconductor device comprises: a semiconductor substrate 10 where an electrode 12 is formed; a passivation film 13 that is formed on the semiconductor substrate 10 and in which a passivation opening 14 is formed at the position facing the electrode 10; and a plurality of laminated metal films 15 and 16. At least one metal film 16 between the plurality of metal films 15 and 16 acts as a mask to remove (etch) the metal film 15 which is closer to the semiconductor substrate 10 than the metal film 16. COPYRIGHT: (C)2004,JPO&NCIPI