SILICON SINGLE CRYSTAL, SEMICONDUCTOR WAFER OBTAINED FROM THE SAME, AND PROCESS AND APPARATUS FOR PRODUCING SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To provide an improved process allowing the concentration of internal defects and of foreign substances such as oxygen and dopant in the radial direction to be adjustable in a targeted fashion within a narrow range. SOLUTION: In the process for producing a single crystal, a tem...

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Hauptverfasser:	GELFGAT YURI, GORBUNOV LEONID, SCHMIDT HERBERT, VIRBULIS JANIS, WEBER MARTIN DR, VON AMMON WILFRIED
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an improved process allowing the concentration of internal defects and of foreign substances such as oxygen and dopant in the radial direction to be adjustable in a targeted fashion within a narrow range. SOLUTION: In the process for producing a single crystal, a temperature distribution which deviates from rotational symmetry is produced in the region of a solidification front in melt when the single crystal is pulled from the melt which is held in a rotating crucible by using a Czochralski method. A silicon single crystal which, over an ingot length of over 10% of the total ingot length, has a uniform defect image and narrow radial dopant and oxygen variations is obtained by the process. COPYRIGHT: (C)2004,JPO&NCIPI